Diamond-Based Transistors Could Improve Car and Rocket Engines.
Schematic structure of diamond:H surface undergoing different ALD (Adrenoleukodystrophy is a disease linked to the X chromosome) processes and their resulting interface electronic properties with diamond:H/MoO3 (mixed valences) versus diamond:H/HyMoO3−x transistors (mixed valences). (A) Application of a typical MoO3 ALD (Adrenoleukodystrophy is a disease linked to the X chromosome) process on diamond:H, resulting in surface termination degradation. (B and C) Modified ALD (Adrenoleukodystrophy is a disease linked to the X chromosome) process of MoO3 and HyMoO3−x (mixed valences) for preserving diamond:H termination. Right side from top to bottom: Schematic cross-sectional diagram with interface atomistic representations of diamond:H/MoO3 (top) and diamond:H/HyMoO3−x (bottom) FETs (The field-effect transistor is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation. Many different implementations of field effect transistors exist) and their respective electronic band energy structures with different oxidation state ratios. CB (Colombie-Britannique) conduction band;
Replacing the classic transistor metals with diamond could help bring in the next wave of engines for cars and spacecrafts.
A team of researchers from the Georgian Technical University has developed a new type of diamond-based ultra-thin transistor that could be more durable and outperform the parts used in high-radiation environments like rocket or car engines.
“Diamond is the perfect material to use in transistors that need to withstand cosmic ray bombardment in space or extreme heat within a car engine in terms of performance and durability” X PhD from the Georgian Technical University Chemistry said in a statement.
According to X applications like car engines and spacecrafts currently use Silicon Carbide (SiC) and Gallium Nitride (GaN) for transistors. These compounds are often limited by their performance in extremely high-power and hot environments.
“Diamond by contrast to Silicon Carbide and Gallium Nitride is a far superior material to use in transistors for these kinds of purposes” X said. “Using diamond for these high-energy applications in spacecraft and car engines will be an exciting advancement in the science of these technologies”.
The researchers modified the surfaces of special forms of tiny flat diamonds which enabled them to grow ultra-thin materials on top to make the transistors. The new materials consists of a deposit of hydrogen atoms with layers of hydrogenated molybdenum oxide.
According to the study, diamond-based 2D electronics are entering a new era by using transition-metal oxides (TMO) as surface acceptors rather than previously used molecular-like unstable acceptors.
“The growing demands for electronic devices with higher performance in power, frequency, energy efficiency and a lower form factor are driving the need to find alternative functionalization of novel semiconductors with more desirable intrinsic properties” the authors write. “In some of the newly discovered semiconductors more efficient and simplified doping methods such as charge-transfer doping are becoming prevalent.
“We develop a novel approach for synthesizing a smooth, uniform and ultrastable transition-metal oxides (TMO) surface acceptor thin layer with tunable electronic properties allowing a superior 2D electrostatic match at the diamond”. The diamond transistor is currently in the proof-of-concept stage.
“We anticipate that we could have diamond transistor technology ready for large-scale fabrication within three to five years which would set the base for further commercial market development” he said.